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si9942dy vishay siliconix document number: 70130 s-000652erev. l, 27-mar-00 www.vishay.com faxback 408-970-5600 1 complimentary 20-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) n - channel 20 0.125 @ v gs = 10 v 3.0 n - channel 20 0.250 @ v gs = 4.5 v 2.0 p - channel 20 0.200 @ v gs = 10 v 2.5 p - channel 20 0.350 @ v gs = 4.5 v 2.0 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet d 1 d 1 g 1 s 1 s 2 g 2 d 2 d 2 p-channel mosfet
parameter symbol n-channel p-channel unit drain-source voltage v ds 20 20 v gate-source voltage v gs 20 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 3.0 2.5 a continuous drain current (t j = 150 c) a t a = 70 c i d 2.5 2.0 a pulsed drain current i dm 10 10 a continuous source current (diode conduction) a i s 1.6 1.6 maximum power dissipation a t a = 25 c p d 2.0 w maximum power dissipation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg 55 to 150 c parameter symbol n- or p-channel unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
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parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 1.0 v gate threshold v oltage v gs(th) v ds = v gs , i d = 250 a p-ch 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 16 v, v gs = 0 v n-ch 2 a zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v p-ch 2 a zero gate v oltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 55 c n-ch 25 a v ds = 16 v, v gs = 0 v, t j = 55 c p-ch 25 os dic b i v ds 5 v, v gs = 10 v n-ch 10 a on - state drain current b i d(on) v ds 5 v, v gs = 10 v p-ch 10 a on - state drain current b i d(on) v ds 5 v, v gs = 4.5 v n-ch 2 a v ds 5 v, v gs = 4.5 v p-ch 2 dis os r i b v gs = 10 v, i d = 1.0 a n-ch 0.07 0.125 drain - source on - state resistance b r ds(on) v gs = 10 v, i d = 1.0 a p-ch 0.12 0.200 drain - source on - state resistance b r ds(on) v gs = 4.5 v, i d = 0.5 a n-ch 0.105 0.250 v gs = 4.5 v, i d = 0.5 a p-ch 0.22 0.350 forward transconductance b g fs v ds = 15 v, i d = 3.0 a n-ch 4.8 s forward t ransconductance b g fs v ds = 15 v, i d = 3.0 a p-ch 3.0 s diode forward voltage b v sd i s = 1.25 a, v gs = 0 v n-ch 0.75 1.2 v diode forward v oltage b v sd i s = 1.25 a, v gs = 0 v p-ch 0.8 1.2 v dynamic a total gate charge q g nch l n-ch 7 25 c total gate charge q g n-channel p-ch 6.7 25 c gate - source charge q gs n channel v ds = 10 v, v gs = 10 v, i d = 2.3 a n-ch 0.75 nc gate - source charge q gs p-channel v ds =10vv gs =10vi d =23a p-ch 1.3 nc gate - drain charge q gd v ds = 10 v, v gs = 10 v, i d = 2.3 a n-ch 1.7 gate - drain charge q gd p-ch 1.6 turn - on delay t ime t d(on) nch l n-ch 6 15 turn - on delay t ime t d(on) nch l p-ch 10 40 rise time t r n-channel v dd = 20 v , r l = 20 n-ch 10 20 rise t ime t r v dd = 20 v , r l = 20 i d 1 a, v gen = 10 v, r g = 6 p-ch 12 40 turn - of f delay time t d(off) p-channel v20vr20 n-ch 17 50 ns turn - of f delay t ime t d(off) v dd = 20 v, r l = 20 i d 1 a, v gen = 10 v, r g = 6 p-ch 20 90 ns fall time t f i d 1 a, v gen 10 v, r g 6 n-ch 10 50 fall t ime t f p-ch 10 50 source - drain reverse recovery t ime t rr i f = 1.25 a, di/dt = 100 a/ s n-ch 45 100 source - drain reverse recovery t ime t rr i f = 1 . 25 a , di/dt = 100 a/ s p-ch 70 100 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
si9942dy vishay siliconix document number: 70130 s-000652erev. l, 27-mar-00 www.vishay.com faxback 408-970-5600 3

0 2 4 6 8 10 0246810 output characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) w ) 3 v v gs = 10 thru 4 v transfer characteristics v gs gate-to-source voltage (v) drain current (a) i d 0 2 4 6 8 10 012345 25 c 125 c t c = 55 c on-resistance ( r ds(on) w ) 0 0.04 0.08 0.12 0.16 0.20 0246810 v gs = 4.5 v v gs = 10 v 0 100 200 300 400 500 600 0 4 8 12 16 20 c rss c oss c iss 0 2 4 6 8 10 02468 v ds = 10 v i d = 2.3 a 0 0.4 0.8 1.2 1.6 2.0 50 0 50 100 150 v gs = 10 v i d = 2 a 2 v
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source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) w ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 0 50 100 150 0.00 0.10 0.20 0.30 0.40 0.50 0246810 i d = 3 a i d = 250 m a variance (v) v gs(th) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t j = 150 c 1 10 0 5 10 15 20 25 30 0.010 0.100 1 10 30 2 1 0.1 0.01 10 3 10 2 11030 10 1 10 4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm t j = 25 c
si9942dy vishay siliconix document number: 70130 s-000652erev. l, 27-mar-00 www.vishay.com faxback 408-970-5600 5

output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) w ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) w ) 0 2 4 6 8 10 0246810 0 2 4 6 8 10 02468 0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 02468 0 100 200 300 400 500 600 700 0 5 10 15 20 0 2 4 6 8 10 01234567 t c = 55 c v gs = 10 v c rss c oss c iss v gs = 4.5 v 125 c v ds =10 v i d = 2.3 a v gs = 10 v i d = 2.3 a v gs = 10 thru 6 v 4 v 5 v 25 c 3 v
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source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) w ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) 0.010 0 25 30 5 15 20 0.100 1 30 0 0.2 0.4 0.6 0.8 1.0 0246810 0.4 0.2 0.0 0.2 0.4 0.6 0.8 50 25 0 25 50 75 100 125 150 t j = 150 c t j = 25 c i d = 2.3 a i d = 250 m a 0.2 0.4 20 10 0.6 0.8 1.0 1.2 1.4 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 duty cycle = 0.5 0.2 0.1 0.05 single pulse 0.02 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 variance (v) v gs(th) 1.6 10 10
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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